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| Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 5.90.2 Unit: mm 4.90.2 q q Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. (Ta=25C) Ratings -30 -60 -25 -50 -5 -1.5 -1 1 150 -55 ~ +150 Unit V 2.540.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA683 2SA684 2SA683 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol emitter voltage 2SA684 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 0.45-0.1 0.45-0.1 1.27 +0.2 V A A W C C 1.27 13.50.5 0.7-0.2 0.70.1 8.60.2 s Features s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h (Ta=25C) Symbol ICBO Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -500mA VCE = -5V, IC = -1A IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -30 -60 -25 -50 -5 85 50 - 0.2 - 0.85 200 20 30 - 0.4 -1.2 V V MHz pF 340 min typ max - 0.1 Unit A V 2SA683 2SA684 2SA683 2SA684 VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package V V FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.2 -1.5 Ta=25C 2SA683, 2SA684 IC -- VCE -1.2 VCE=-10V Ta=25C -1.0 IC -- IB Collector power dissipation PC (W) 1.0 -1.25 -9mA -1 -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 0.8 0.6 - 0.75 0.4 - 0.5 0.2 - 0.25 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 Collector current IC (mA) IB=-10mA Collector current IC (A) - 0.8 - 0.6 - 0.4 - 0.2 0 0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 -1 Ta=-25C 75C 25C IC/IB=10 -600 hFE -- IC VCE=-10V Forward current transfer ratio hFE -500 -400 Ta=75C -300 25C -25C - 0.3 - 0.1 - 0.03 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -200 -100 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 200 180 Cob -- VCB 50 -120 VCER -- RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C IC=-10mA Ta=25C Collector output capacitance Cob (pF) VCB=-10V Ta=25C 45 40 35 30 25 20 15 10 5 0 -1 Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 3 10 30 100 -100 -80 -60 2SA684 -40 2SA683 -20 -3 -10 -30 -100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistor ICEO -- Ta 104 VCE=-10V -10 -3 ICP 103 2SA683, 2SA684 Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (A) -1 t=10ms IC t=1s ICEO (Ta) ICEO (Ta=25C) - 0.3 - 0.1 102 - 0.03 - 0.01 2SA683 -1 -3 -10 - 0.003 1 0 20 40 60 80 100 120 140 160 - 0.001 - 0.1 - 0.3 -30 2SA684 -100 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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